PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 120V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Continuous Collector Current (IC). Operates with a 140V Collector-Base Voltage (VCBO) and 10V Emitter-Base Voltage (VEBO). Packaged in a TO-92 compatible E-LINE package, this component offers a 160MHz transition frequency and 1W maximum power dissipation. Suitable for through-hole mounting, it operates across a -55°C to 150°C temperature range and is RoHS compliant.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
2.41mm |
| Height |
4.01mm |
| Length |
4.77mm |
| Weight |
0.016oz |
| Polarity |
PNP |
| Lead Free |
Lead Free |
| Packaging |
Box |
| Package/Case |
TO-92 |
| Current Rating |
-1A |
| RoHS Compliant |
Yes |
| DC Rated Voltage |
-120V |
| Package Quantity |
2000 |
| Number of Elements |
1 |
| Radiation Hardening |
No |
| Transition Frequency |
160MHz |
| Max Collector Current |
1A |
| Max Power Dissipation |
1W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Emitter Base Voltage (VEBO) |
10V |
| Continuous Collector Current |
-1A |
| Collector Base Voltage (VCBO) |
140V |
| Collector-emitter Voltage-Max |
2.5V |
| Collector Emitter Voltage (VCEO) |
120V |
| Collector Emitter Breakdown Voltage |
120V |
| Collector Emitter Saturation Voltage |
1.3V |