ZTX705STZ

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ZTX705STZ - Diodes
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Краткое описание: PNP BJT Transistor, 120V VCEO, 1A IC, TO-92, 160MHz
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 120V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Continuous Collector Current (IC). Operates with a 140V Collector-Base Voltage (VCBO) and 10V Emitter-Base Voltage (VEBO). Packaged in a TO-92 compatible E-LINE package, this component offers a 160MHz transition frequency and 1W maximum power dissipation. Suitable for through-hole mounting, it operates across a -55°C to 150°C temperature range and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 2.41mm
Height 4.01mm
Length 4.77mm
Weight 0.016oz
Polarity PNP
Lead Free Lead Free
Packaging Box
Package/Case TO-92
Current Rating -1A
RoHS Compliant Yes
DC Rated Voltage -120V
Package Quantity 2000
Number of Elements 1
Radiation Hardening No
Transition Frequency 160MHz
Max Collector Current 1A
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current -1A
Collector Base Voltage (VCBO) 140V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 120V
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 1.3V