ZTX796A
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PNP BJT Transistor, 200V VCEO, 500mA IC, 100MHz, TO-92
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 200V Collector Emitter Breakdown Voltage (VCEO) and a 200V Collector Base Voltage (VCBO). Offers a continuous collector current of -500mA and a transition frequency of 100MHz. Packaged in a TO-92 compatible E-LINE package with 3 leads, suitable for through-hole mounting. Power dissipation rated at 1W, with operating temperatures from -55°C to 200°C. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -200V |
| Package Quantity | 2000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -500mA |
| Collector Base Voltage (VCBO) | 200V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | -300mV |
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