ZTX851
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NPN BJT Transistor, 60V VCEO, 5A IC, 130MHz, TO-92
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and 5A Continuous Collector Current (IC). Offers a 150V Collector-Base Voltage (VCBO) and 6V Emitter-Base Voltage (VEBO). Operates with a 130MHz Transition Frequency and 1.2W Max Power Dissipation. Packaged in a 3-pin E-LINE TO-92 package, this component is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Frequency | 130MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 130MHz |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 4000 |
| Power Dissipation | 1.2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 130MHz |
| Max Collector Current | 5A |
| Max Power Dissipation | 1.2W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 5A |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 180mV |
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