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NPN BJT Transistor, 60V, 5A, 130MHz, TO-226-3
Дополнительная информация
NPN bipolar junction transistor featuring 60V collector-emitter breakdown voltage and 5A continuous collector current. This silicon transistor offers a maximum power dissipation of 1.2W and a transition frequency of 130MHz. Housed in a TO-226-3 (E-LINE) package, it supports through-hole mounting and operates within a temperature range of -55°C to 200°C. Key specifications include a 250mV collector-emitter saturation voltage and a minimum hFE of 75.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| hFE Min | 75 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-226-3 |
| Max Frequency | 130MHz |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 2000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Power Dissipation | 1.2W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 5A |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
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