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NPN BJT Transistor, 100V, 4A, 130MHz, TO-92
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 100V collector-emitter breakdown voltage and a continuous collector current of 4A. Offers a maximum power dissipation of 1.2W and a transition frequency of 130MHz. Packaged in a TO-92 compatible E-LINE package with 3 pins, supplied on tape and reel. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Packaging | Tape and Reel |
| Package/Case | TO-92 |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 2000 |
| Radiation Hardening | No |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 4A |
| Max Power Dissipation | 1.2W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 4A |
| Collector Base Voltage (VCBO) | 200V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 160mV |
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