ZTX855
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NPN BJT Transistor, 150V VCEO, 4A IC, 90MHz, TO-92
Дополнительная информация
NPN silicon bipolar junction transistor for through-hole mounting. Features a continuous collector current of 4A, collector-emitter breakdown voltage of 150V, and a transition frequency of 90MHz. Housed in a TO-92 compatible plastic/epoxy package with 3 pins. Offers a maximum power dissipation of 1.2W and operates across a temperature range of -55°C to 200°C. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Frequency | 90MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 100MHz |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 150V |
| Package Quantity | 4000 |
| Power Dissipation | 1.2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 90MHz |
| Max Collector Current | 4A |
| Max Power Dissipation | 1.2W |
| Gain Bandwidth Product | 90MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 4A |
| Collector Base Voltage (VCBO) | 250V |
| Collector-emitter Voltage-Max | 260mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 210mV |
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