ZTX869
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Краткое описание:
NPN BJT Transistor, 5A I(C), 25V V(CEO), 100MHz, TO-92
Дополнительная информация
NPN silicon bipolar junction transistor featuring a 5A continuous collector current and 25V collector-emitter breakdown voltage. This through-hole component offers a 100MHz transition frequency and a low 180mV collector-emitter saturation voltage. Housed in a 3-pin E-LINE package, it operates within a temperature range of -55°C to 200°C and has a maximum power dissipation of 1.2W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 100MHz |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Package Quantity | 4000 |
| Power Dissipation | 1.2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Collector Current | 5A |
| Max Power Dissipation | 1.2W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 5A |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 220mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 180mV |
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