ZTX956

ZTX956 - Diodes
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Краткое описание: PNP BJT Transistor, 200V, 2A, 110MHz, TO-92

Дополнительная информация

PNP Silicon Bipolar Junction Transistor, 200V Collector-Emitter Breakdown Voltage, 2A Continuous Collector Current, and 150°C Max Operating Temperature. This through-hole component features a 110MHz Gain Bandwidth Product and a -220V Collector Base Voltage. Housed in a TO-92 compatible plastic/epoxy package with 3 pins, it offers a Max Power Dissipation of 1.58W and is both Lead Free and RoHS Compliant.
RoHS Compliant
Mount Through Hole
Width 2.41mm
Height 4.01mm
Length 4.77mm
Weight 0.016oz
Polarity PNP
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Current Rating -2A
RoHS Compliant Yes
DC Rated Voltage -200V
Package Quantity 4000
Reach SVHC Compliant Yes
Transition Frequency 110MHz
Max Collector Current 2A
Max Power Dissipation 1.58W
Gain Bandwidth Product 110MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -6V
Continuous Collector Current -2A
Collector Base Voltage (VCBO) -220V
Collector-emitter Voltage-Max 250mV
Collector Emitter Breakdown Voltage 200V

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