ZTX957
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PNP BJT Transistor, 300V VCEO, 1A IC, 85MHz, TO-92
Дополнительная информация
PNP silicon bipolar junction transistor (BJT) for through-hole mounting in a TO-92 compatible package. Features a 300V collector-emitter breakdown voltage (VCEO), 1A continuous collector current (IC), and a transition frequency (fT) of 85MHz. Offers a maximum power dissipation of 1.2W and operates across a temperature range of -55°C to 200°C. This component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Weight | 0.016oz |
| Polarity | PNP |
| Frequency | 85MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
| Package Quantity | 4000 |
| Power Dissipation | 1.2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 85MHz |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1.2W |
| Gain Bandwidth Product | 85MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | 330V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -140mV |
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