ZUMT618TA

ZUMT618TA - Diodes
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Краткое описание: NPN BJT Transistor, 20V VCEO, 1.25A IC, 210MHz, SOT-323

Дополнительная информация

NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 1.25A continuous collector current and 20V collector-emitter breakdown voltage. Operates with a 210MHz gain bandwidth product and a collector-emitter saturation voltage of 155mV. Packaged in a SOT-323 surface mount case, this RoHS and REACH SVHC compliant component offers a wide operating temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.26mm
Height 1mm
Length 2.2mm
Weight 0.000212oz
Polarity NPN
Frequency 210MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-323
Max Frequency 210MHz
Current Rating 1.25A
RoHS Compliant Yes
DC Rated Voltage 20V
Package Quantity 3000
Power Dissipation 500mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 210MHz
Max Breakdown Voltage 20V
Max Collector Current 1.25A
Max Power Dissipation 500mW
Gain Bandwidth Product 210MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1.25A
Collector Base Voltage (VCBO) 20V
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 20V
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage 155mV

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