ZX5T2E6TA
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Краткое описание:
PNP BJT Transistor, 3.5A Ic, 20V Vceo, SOT-23-6
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23-6 package. Features a continuous collector current of -3.5A, collector-emitter breakdown voltage of 20V, and a transition frequency of 110MHz. Designed for surface mounting with a maximum power dissipation of 1.7W. Operates across a wide temperature range from -55°C to 150°C. This component is Lead Free, RoHS Compliant, and REACH SVHC Compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-6 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 110MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 3.5A |
| Max Power Dissipation | 1.7W |
| Gain Bandwidth Product | 110MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7.5V |
| Continuous Collector Current | -3.5A |
| Collector Base Voltage (VCBO) | -25V |
| Collector-emitter Voltage-Max | 130mV |
| Collector Emitter Breakdown Voltage | 20V |
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