ZXMHC10A07N8TC
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Краткое описание:
4-Element JFET, N/P-Channel, 100V, 1A, 700mR, SOP-8
Дополнительная информация
Surface mount N-channel and P-channel junction field-effect transistor (JFET) with 100V Drain to Source Voltage (Vdss) and 1A Continuous Drain Current (ID). Features 700mR Rds On Max, 1.45R Drain to Source Resistance, and 138pF Input Capacitance. Operates across a -55°C to 150°C temperature range with a 870mW Max Power Dissipation. This 4-element silicon Metal-oxide Semiconductor FET is supplied in a tape and reel package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N and 2 P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 3.3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 700mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 138pF |
| Number of Channels | 4 |
| Turn-On Delay Time | 1.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 5.9ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 870mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.45R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 100V |
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