ZXMHC3A01T8TA
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Краткое описание:
N/P-Channel MOSFET, 30V, 3.1A, 120mR, 4-Element, SMD
Дополнительная информация
Surface mount N-channel and P-channel MOSFET featuring 30V drain-source voltage and 3.1A continuous drain current. Offers a maximum drain-source on-resistance of 120mΩ at 10Vgs. This 4-element silicon Metal-oxide Semiconductor FET operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.7W. Packaged in tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.6mm |
| Length | 6.7mm |
| FET Type | 2 N and 2 P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 2.3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Package/Case | SMD/SMT |
| Current Rating | 3.1A |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 190pF |
| Power Dissipation | 1.7W |
| Threshold Voltage | -1V |
| Number of Channels | 4 |
| Number of Elements | 4 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12.1ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 330mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 210mR |
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