ZXMHC3F381N8TC

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ZXMHC3F381N8TC - Diodes
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Краткое описание: N/P-Ch JFET, 30V, 3.36A ID, 55mR Rds(on), SOP-8
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

Surface mount, 4-element, N-channel and P-channel junction field-effect transistor (JFET) designed for small signal applications. Features a 30V drain-source voltage (Vdss) and a continuous drain current (ID) of 3.36A. Offers a low drain-source on-resistance (Rds On) of 33mR. Operates within a temperature range of -55°C to 150°C. Packaged in SOIC for tape and reel distribution.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Weight 0.00261oz
FET Type 2 N and 2 P-Channel
Polarity N-CHANNEL, P-CHANNEL
Fall Time 21ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 33mR
Package/Case SOIC
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 430pF
Power Dissipation 1.35W
Threshold Voltage 1V
Number of Channels 4
Number of Elements 4
Turn-On Delay Time 1.9ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Reach SVHC Compliant No
Max Power Dissipation 870mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 80mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3.36A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 55mR

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