ZXMN6A09DN8TA
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N-Channel JFET, 60V, 5.6A, 40mR Rds(on), SOIC
Дополнительная информация
N-Channel Silicon Metal-Oxide Semiconductor FET, 2-Element, SO-8 package. Features 60V Drain-Source Voltage (Vdss), 5.6A Continuous Drain Current (ID), and 40mR Drain-source On Resistance (Rds On Max). Operates with a Gate to Source Voltage (Vgs) up to 20V, offering a 4.9ns Turn-On Delay Time and 4.6ns Fall Time. Maximum Power Dissipation is 2.1W, with an operating temperature range of -55°C to 150°C. Surface mountable and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.00261oz |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 4.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | SOIC |
| Current Rating | 4.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 1.407nF |
| Power Dissipation | 2.1W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 4.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25.3ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 2.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 40mR |
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