ZXMP10A13FTA
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Краткое описание:
P-Channel JFET, -100V Vdss, -700mA ID, 1R Rds(on), SOT-23
Дополнительная информация
P-channel Silicon Metal-oxide Semiconductor FET, a single-element JFET in a SOT-23 package. Features a continuous drain current of -700mA, drain-source voltage of -100V, and a maximum drain-source on resistance of 1 Ohm. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 806mW. Surface mountable with a 1.6ns turn-on delay and 3.3ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | P-CHANNEL |
| Fall Time | 3.3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1R |
| Package/Case | SOT-23 |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 3000 |
| Input Capacitance | 141pF |
| Power Dissipation | 806mW |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 1.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 5.9ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.45R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | -700mA |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 1R |
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