ZXT10P12DE6TA
Производится
Увеличить
Краткое описание:
PNP BJT Transistor, 3A I(C), 12V V(CEO), 110MHz, SOT-23-6
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a 12V collector-emitter breakdown voltage and a continuous collector current rating of -3A. Offers a minimum DC current gain (hFE) of 180 and a transition frequency of 110MHz. Housed in a 6-pin SOT-23-6 package, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.1W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.75mm |
| Height | 1.3mm |
| Length | 3mm |
| Weight | 0.000529oz |
| hFE Min | 180 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23-6 |
| Max Frequency | 110MHz |
| Current Rating | -3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -12V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 110MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1.1W |
| Gain Bandwidth Product | 110MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -3A |
| Collector Base Voltage (VCBO) | -12V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -195mV |
