ZXT10P40DE6TA
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Краткое описание:
PNP BJT Transistor, 40V, 2A, 190MHz, SOT-23-6
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -2A. Offers a maximum power dissipation of 1.1W and a transition frequency of 190MHz. Packaged in a 6-pin SOT-23-6, this lead-free and RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | PNP |
| Frequency | 190MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-6 |
| Max Frequency | 190MHz |
| Current Rating | -2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 3000 |
| Power Dissipation | 1.7W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 190MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 2A |
| Max Power Dissipation | 1.1W |
| Gain Bandwidth Product | 190MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -2A |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -210mV |
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