ZXT12P40DXTA
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Краткое описание:
PNP BJT Transistor, 40V VCEO, 2A IC, 130MHz, MSOP
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage and a continuous collector current of -2.5A, with a rated current of -2A. Offers a gain bandwidth product of 130MHz and a maximum power dissipation of 1.25W. Packaged in a surface-mount MSOP-8 (MO-187AA) with dimensions of 3.1mm x 3.1mm x 0.95mm. Operates across a temperature range of -55°C to 150°C and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.1mm |
| Height | 0.95mm |
| Length | 3.1mm |
| Weight | 0.004938oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | MSOP |
| Max Frequency | 130MHz |
| Current Rating | -2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 2A |
| Max Power Dissipation | 1.25W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | -2.5A |
| Collector Base Voltage (VCBO) | -25V |
| Collector-emitter Voltage-Max | 260mV |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -150mV |
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