ZXT13N50DE6TA
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Краткое описание:
NPN BJT Transistor, 50V, 4A, 115MHz, SOT-23-6
Дополнительная информация
NPN bipolar junction transistor featuring a 50V collector-emitter breakdown voltage and 4A continuous collector current. This surface mount device, housed in a SOT-23-6 package, offers a 115MHz gain bandwidth product and a maximum power dissipation of 1.7W. Operating across a temperature range of -55°C to 150°C, it is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | NPN |
| Frequency | 115MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-6 |
| Max Frequency | 115MHz |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 1.7W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 115MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 4A |
| Max Power Dissipation | 1.1W |
| Gain Bandwidth Product | 115MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | 4A |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 180mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 145mV |
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