ZXT13P20DE6TA

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ZXT13P20DE6TA - Diodes
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Краткое описание: PNP BJT Transistor, 20V VCEO, 4A IC, 90MHz, SOT-23-6
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 20V Collector-Emitter Breakdown Voltage (VCEO) and a 4A Continuous Collector Current. Operates with a 90MHz Gain Bandwidth Product and a 250mV Max Collector-Emitter Voltage. Packaged in a SOT-23-6 surface mount case, this silicon transistor offers a -55°C to 150°C operating temperature range and is RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 1.8mm
Height 1.3mm
Length 3.1mm
Weight 0.000529oz
Polarity PNP
Frequency 90MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-6
Max Frequency 90MHz
Current Rating -3.5A
RoHS Compliant Yes
DC Rated Voltage -20V
Package Quantity 1
Power Dissipation 1.7W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 90MHz
Max Breakdown Voltage 20V
Max Collector Current 4A
Max Power Dissipation 1.1W
Gain Bandwidth Product 90MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -4A
Collector Base Voltage (VCBO) 25V
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 20V
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage -165mV

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