ZXT1M322TA
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Краткое описание:
PNP BJT Transistor, 4A I(C), 12V V(BR)CEO, 110MHz, SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a continuous collector current of -4A and a collector-emitter breakdown voltage of 12V. Offers a maximum power dissipation of 3W and a gain bandwidth product of 110MHz. Operates within a temperature range of -55°C to 150°C. Packaged in a 2 x 2 MM MLP322, 5-pin configuration.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2mm |
| Height | 1mm |
| Length | 2mm |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Current Rating | -4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -12V |
| Package Quantity | 1 |
| Transition Frequency | 110MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 4A |
| Max Power Dissipation | 3W |
| Gain Bandwidth Product | 110MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | -4A |
| Collector Base Voltage (VCBO) | -20V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -240mV |
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