ZXT790AKTC
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Краткое описание:
PNP BJT Transistor, 40V VCEO, 3A IC, 100MHz, DPAK, SM
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a DPAK package, designed for surface mounting. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 40V. Offers a transition frequency of 100MHz and a maximum power dissipation of 3.9W. Operates across a wide temperature range from -55°C to 150°C. This component is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.009185oz |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | DPAK |
| Max Frequency | 100MHz |
| Current Rating | -3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 2500 |
| Power Dissipation | 3.9W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Power Dissipation | 3.9W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 450mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -260mV |
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