ZXT849KTC
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Краткое описание:
NPN BJT, 7A, 30V, 100MHz, DPAK, SM
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) in a DPAK surface-mount package. Features a continuous collector current of 7A, collector-emitter breakdown voltage of 30V, and a transition frequency of 100MHz. Offers a maximum power dissipation of 4.2W and operates within a temperature range of -55°C to 150°C. This lead-free, RoHS-compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.012346oz |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | DPAK |
| Max Frequency | 100MHz |
| Current Rating | 7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 2500 |
| Power Dissipation | 4.2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 7A |
| Max Power Dissipation | 4.2W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 7A |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 280mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 230mV |
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