ZXT951KTC
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Краткое описание:
PNP BJT Transistor, 6A I(C), 60V V(BR)CEO, DPAK, 120MHz
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 6A continuous collector current and 60V collector-emitter breakdown voltage. Operates with a transition frequency of 120MHz and a maximum power dissipation of 4.2W. Packaged in a DPAK case, this component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.009185oz |
| Polarity | PNP |
| Frequency | 120MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | DPAK |
| Current Rating | -6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1 |
| Power Dissipation | 4.2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 6A |
| Max Power Dissipation | 4.2W |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7V |
| Continuous Collector Current | -6A |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
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