ZXTC2063E6TA

ZXTC2063E6TA - Diodes
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Краткое описание: NPN/PNP BJT, 40V, 3A, 270MHz, SOT-26

Дополнительная информация

Dual-element NPN and PNP silicon bipolar junction transistor for surface mount applications. Features a 40V collector-emitter breakdown voltage and 3A maximum collector current. Operates with a 190MHz frequency and 270MHz gain bandwidth product. Packaged in a SOT-26 with a maximum power dissipation of 1.7W. Compliant with RoHS and REACH SVHC standards.
RoHS Compliant
Mount Surface Mount
Width 1.8mm
Height 1.3mm
Length 3.1mm
Weight 0.000282oz
Polarity NPN, PNP
Frequency 190MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-26
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 1.7W
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 270MHz
Max Breakdown Voltage 40V
Max Collector Current 3A
Max Power Dissipation 1.7W
Gain Bandwidth Product 270MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 130V
Collector-emitter Voltage-Max 195mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V

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