ZXTCM322TA
Снят с производства
Увеличить
Краткое описание:
NPN BJT Transistor, 4A Ic, 50V Vceo, 165MHz, SMT
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 4A continuous collector current and 50V collector-emitter breakdown voltage. Offers a 165MHz gain bandwidth product and 3W maximum power dissipation. Packaged in a miniature 2x2mm MLP322 surface mount package with 5 pins, suitable for tape and reel packaging. Operates across a wide temperature range from -55°C to 150°C, is lead-free, and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2mm |
| Height | 1mm |
| Length | 2mm |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Transition Frequency | 165MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 4A |
| Max Power Dissipation | 3W |
| Gain Bandwidth Product | 165MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | 4A |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 320mV |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 270mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
