ZXTD09N50DE6TA
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Краткое описание:
NPN BJT, 50V, 1A, 215MHz, SOT-23-6
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Continuous Collector Current. Operates with a 215MHz transition frequency and offers a low 160mV Collector-Emitter Saturation Voltage. Packaged in a SOT-23-6 surface mount configuration, this lead-free and RoHS compliant component supports a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.3mm |
| Length | 3.1mm |
| Weight | 0.000529oz |
| Polarity | NPN |
| Frequency | 215MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-6 |
| Max Frequency | 215MHz |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 1.7W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Transition Frequency | 215MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1.7W |
| Gain Bandwidth Product | 215MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 1A |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 270mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 160mV |
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