ZXTD1M832TA

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ZXTD1M832TA - Diodes
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Краткое описание: PNP BJT Transistor 12V 4A 110MHz Surface Mount
Производитель Diodes
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 12V collector-emitter breakdown voltage and a continuous collector current of -4A. Offers a maximum power dissipation of 1.7W and a transition frequency of 110MHz. Packaged in tape and reel, this lead-free and RoHS compliant component operates from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 2mm
Height 1mm
Length 3mm
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Current Rating -4A
RoHS Compliant Yes
DC Rated Voltage -12V
Package Quantity 3000
Transition Frequency 110MHz
Max Breakdown Voltage 12V
Max Collector Current 4A
Max Power Dissipation 1.7W
Gain Bandwidth Product 110MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -4A
Collector Base Voltage (VCBO) -20V
Collector-emitter Voltage-Max 300mV
Collector Emitter Breakdown Voltage 12V
Collector Emitter Saturation Voltage -240mV

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