ZXTD2M832TA

ZXTD2M832TA - Diodes
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Краткое описание: PNP BJT Transistor, 3.5A IC, 20V VCEO, 180MHz, SMT

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -3.5A and a collector-emitter breakdown voltage of 20V. Offers a collector-emitter saturation voltage of -240mV and a transition frequency of 180MHz. Packaged in a 3mm x 2mm MLP832 surface-mount package with 10 pins. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 2mm
Height 1mm
Length 3mm
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Current Rating -3.5A
RoHS Compliant Yes
DC Rated Voltage -20V
Package Quantity 3000
Transition Frequency 180MHz
Max Breakdown Voltage 20V
Max Collector Current 3.5A
Max Power Dissipation 1.7W
Gain Bandwidth Product 180MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -3.5A
Collector Base Voltage (VCBO) -25V
Collector-emitter Voltage-Max 300mV
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage -240mV

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