ZXTDAM832TA
Увеличить
Краткое описание:
NPN BJT Transistor, 4.5A I(C), 15V V(BR)CEO, 120MHz, MLP832
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of 4.5A, collector-emitter breakdown voltage of 15V, and a transition frequency of 120MHz. This surface mount device offers a maximum power dissipation of 1.7W and operates within a temperature range of -55°C to 150°C. The component is housed in an 8-pin MLP package measuring 3 x 2 x 1 mm and is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2mm |
| Height | 1mm |
| Length | 3mm |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 15V |
| Package Quantity | 3000 |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 4.5A |
| Max Power Dissipation | 1.7W |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | 4.5A |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 280mV |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 240mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
