ZXTN04120HFFTA
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Краткое описание:
NPN BJT Transistor, 120V VCEO, 1A IC, SOT-23-3
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features a 120V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Operates with a collector-emitter saturation voltage of 900mV and a transition frequency of 120MHz. Housed in a 3-pin SOT-23F surface-mount package, this silicon transistor offers a minimum hFE of 3000 and a maximum power dissipation of 1.5W. Compliant with RoHS standards, it operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| hFE Min | 3000 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 10V |
| Collector Base Voltage (VCBO) | 140V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 900mV |
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