ZXTN07012EFFTA
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Краткое описание:
NPN BJT Transistor, 12V VCEO, 4.5A IC, 220MHz, SOT-23-3
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a maximum collector current of 4.5A and a collector-emitter breakdown voltage of 12V. Offers a maximum power dissipation of 2W and a transition frequency of 220MHz. Packaged in a 3-pin SOT-23F with tape and reel availability. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| Polarity | NPN |
| Frequency | 220MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 220MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 220MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 4.5A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 220MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 320mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 320mV |
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