ZXTN19060CFFTA

ZXTN19060CFFTA - Diodes
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Краткое описание: NPN BJT Transistor, 60V, 5.5A, 130MHz, SOT-23-3

Дополнительная информация

NPN bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 5.5A. Offers a 130MHz transition frequency and a low 175mV collector-emitter saturation voltage. Packaged in a SOT-23-3 surface-mount case, this silicon transistor operates from -55°C to 150°C and is RoHS and REACH SVHC compliant.
RoHS Compliant
Mount Surface Mount
Width 1.7mm
Height 1mm
Length 3mm
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 130MHz
RoHS Compliant Yes
Package Quantity 1
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 130MHz
Max Breakdown Voltage 60V
Max Collector Current 5.5A
Max Power Dissipation 2W
Gain Bandwidth Product 130MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 160V
Collector-emitter Voltage-Max 175mV
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 175mV

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