ZXTN19100CFFTA
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Краткое описание:
NPN BJT Transistor, 100V VCEO, 4.5A IC, 150MHz, SOT-23-3
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features a 100V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 4.5A. Offers a maximum power dissipation of 1.5W and a transition frequency of 150MHz. Packaged in a 3-pin SOT-23F surface-mount case. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.001721oz |
| hFE Min | 200 |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 150MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 16W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 4.5A |
| Max Power Dissipation | 1.5W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 4.5A |
| Collector Base Voltage (VCBO) | 200V |
| Collector-emitter Voltage-Max | 235mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 60mV |
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