ZXTN2005ZTA
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Краткое описание:
NPN BJT Transistor, 5.5A, 25V, SOT-89, 150MHz
Дополнительная информация
NPN bipolar junction transistor (BJT) for surface mount applications. Features a continuous collector current of 5.5A and a collector-emitter breakdown voltage of 25V. Offers a maximum power dissipation of 2.1W and a transition frequency of 150MHz. Packaged in a 4-pin SOT-89 (TO-243AA) plastic/epoxy case, supplied on tape and reel. Operates from -55°C to 150°C, is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| hFE Min | 200 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-243AA |
| Current Rating | 5.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 5.5A |
| Max Power Dissipation | 2.1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 5.5A |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 200mV |
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