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NPN BJT Transistor, 60V, 4.5A, 130MHz, TO-226-3
Дополнительная информация
NPN bipolar junction transistor (BJT) featuring a 60V collector-emitter breakdown voltage and a continuous collector current of 4.5A. This silicon transistor offers a maximum power dissipation of 1W and a transition frequency of 130MHz. Designed for through-hole mounting in a TO-226-3 package, it operates within a temperature range of -55°C to 150°C and is RoHS and Lead Free compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.41mm |
| Height | 4.01mm |
| Length | 4.77mm |
| Polarity | NPN |
| Frequency | 130MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-226-3 |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 2000 |
| Power Dissipation | 710mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 4.5A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 4.5A |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 210mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
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