ZXTN2010ZTA
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NPN BJT Transistor, 60V, 5A, 130MHz, SOT-89, Surface Mount
Дополнительная информация
NPN bipolar junction transistor in a SOT-89 package, featuring a 60V collector-emitter breakdown voltage and a 5A continuous collector current. This silicon transistor offers a maximum power dissipation of 2.1W and a transition frequency of 130MHz. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| Polarity | NPN |
| Frequency | 130MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 130MHz |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Power Dissipation | 2.1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Power Dissipation | 2.1W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 5A |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 230mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 230mV |
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