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NPN BJT Transistor, 100V, 4.5A, 130MHz, SOT-89
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 100V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) rating of 4.5A. Offers a transition frequency (fT) of 130MHz and a maximum power dissipation of 2.1W. Packaged in a SOT-89 case, this 3-pin component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| Polarity | NPN |
| Frequency | 130MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 130MHz |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1000 |
| Power Dissipation | 2.1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 4.5A |
| Max Power Dissipation | 2.1W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 4.5A |
| Collector Base Voltage (VCBO) | 200V |
| Collector-emitter Voltage-Max | 195mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 195mV |
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