ZXTN25012EFLTA
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Краткое описание:
NPN BJT Transistor, 12V VCEO, 2A IC, SOT-23, 260MHz
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 12V Collector Emitter Breakdown Voltage (VCEO) and a 2A Maximum Collector Current (IC). Operates with a 260MHz Transition Frequency and a 300mV Collector Emitter Saturation Voltage. Packaged in a 3-pin SOT-23 surface mount case, this lead-free and RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 260MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 350mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 260MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 2A |
| Max Power Dissipation | 350mW |
| Gain Bandwidth Product | 260MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 300mV |
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