ZXTN25020DFHTA
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Краткое описание:
NPN BJT Transistor, 20V VCEO, 4.5A IC, SOT-23, 215MHz
Дополнительная информация
NPN bipolar junction transistor in a SOT-23 package, featuring a 4.5A maximum collector current and a 20V collector-emitter breakdown voltage. This silicon transistor offers a 215MHz transition frequency and a 265mV collector-emitter saturation voltage. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.81W. It is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 215MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 3000 |
| Power Dissipation | 1.81W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 215MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 4.5A |
| Max Power Dissipation | 1.81W |
| Gain Bandwidth Product | 215MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 265mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 265mV |
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