ZXTN25020DGTA
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Краткое описание:
NPN BJT Transistor, 7A Ic, 20V Vceo, SOT-223, 215MHz
Дополнительная информация
NPN bipolar junction transistor in SOT-223 package, featuring a 20V collector-emitter breakdown voltage and a 7A maximum collector current. This silicon transistor offers a 215MHz transition frequency and a 5.3W power dissipation. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 215MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 5.3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 215MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 7A |
| Max Power Dissipation | 5.3W |
| Gain Bandwidth Product | 215MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 290mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
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