ZXTN25040DFLTA
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Краткое описание:
NPN BJT Transistor, 40V, 1.5A, 190MHz, SOT-23
Дополнительная информация
NPN bipolar junction transistor in a SOT-23 package, featuring a 40V collector-emitter breakdown voltage and a continuous collector current of 1.5A. This silicon transistor offers a maximum power dissipation of 350mW and a transition frequency of 190MHz. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 190MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 190MHz |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 3000 |
| Power Dissipation | 350mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 190MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 350mW |
| Gain Bandwidth Product | 190MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 1.5A |
| Collector Base Voltage (VCBO) | 130V |
| Collector-emitter Voltage-Max | 285mV |
| Collector Emitter Voltage (VCEO) | 130V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 85mV |
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