ZXTN25100DGTA
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Краткое описание:
NPN BJT Transistor, 100V VCEO, 3A IC, 175MHz, SOT-223
Дополнительная информация
NPN bipolar junction transistor (BJT) for surface mount applications in a SOT-223 package. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 100V. Offers a maximum power dissipation of 5.3W and a transition frequency of 175MHz. Operates across a wide temperature range from -55°C to 150°C. This component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 175MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 175MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 5.3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 175MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Power Dissipation | 5.3W |
| Gain Bandwidth Product | 175MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 180V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 500mV |
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