ZXTN26020DMFTA

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ZXTN26020DMFTA - Diodes
Краткое описание: NPN BJT 20V 1.5A 260MHz DFN EP SMT Transistor
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 3-pin DFN EP package with exposed pad, measuring 1.4mm x 1.1mm x 0.48mm. Offers a maximum collector-emitter voltage of 20V and a continuous collector current of 1.5A. Maximum power dissipation is 1000mW. Minimum DC current gain ranges from 200 to 300 depending on collector current and voltage. Operates across a temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Power
HTS Code 8541290075
Mounting Surface Mount
Cage Code 6M0U4
Pin Count 3
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Package/Case DFN EP
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 1.1
Package Description Dual Flat Package No Lead, Exposed Pad
Package Family Name DFN
Package Height (mm) 0.48
Package Length (mm) 1.4
Radiation Hardening No
Minimum DC Current Gain 300@100mA@2V|[email protected]@2V|270@1A@2V|200@2A@2V
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 1.5A
Maximum Emitter Base Voltage 7V
Maximum Transition Frequency 260(Typ)MHz
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 20V

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