ZXTN4004KTC

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ZXTN4004KTC - Diodes
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Краткое описание: NPN BJT Transistor, 150V, 1A, TO-252, Surface Mount
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) in a TO-252 surface-mount package. Features a 150V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) of 1A. Offers a maximum power dissipation of 3.8W and an operating temperature range of -55°C to 150°C. This silicon transistor is RoHS compliant and supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 2.39mm
Height 6.2mm
Length 6.7mm
Weight 0.063493oz
hFE Min 100
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case TO-252
RoHS Compliant Yes
Package Quantity 2500
Power Dissipation 3.8W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 150V
Max Collector Current 1A
Max Power Dissipation 3.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 1A
Collector Base Voltage (VCBO) 150V
Collector-emitter Voltage-Max 150V
Collector Emitter Voltage (VCEO) 150V
Collector Emitter Breakdown Voltage 150V

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