ZXTN5551ZTA
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NPN BJT Transistor, 160V V(BR)CEO, 600mA I(C), SOT-89, 130MHz
Дополнительная информация
NPN silicon bipolar junction transistor in a SOT-89 surface mount package. Features a 160V collector-emitter breakdown voltage, 600mA max collector current, and 1.2W power dissipation. Operates across a -55°C to 150°C temperature range with a 130MHz transition frequency. This 3-pin component is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| Polarity | NPN |
| Frequency | 130MHz |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 130MHz |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 1.2W |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 180V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
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