ZXTN620MATA

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ZXTN620MATA - Diodes
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Краткое описание: NPN BJT 80V 3.8A 2.45W DFN EP 3-Pin SMT Transistor
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter voltage, 3.8A continuous collector current, and 2450mW maximum power dissipation. This single-element transistor is housed in a 3-pin DFN EP package with exposed pad, measuring 2mm x 2mm x 0.58mm. DC current gain ranges from 200 to 60 depending on collector current. Operates from -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Power
HTS Code 8541290075
Mounting Surface Mount
Cage Code 6M0U4
Pin Count 3
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Package/Case DFN EP
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 2
Package Description Dual Flat Package No Lead, Exposed Pad
Package Family Name DFN
Package Height (mm) 0.58
Package Length (mm) 2
Radiation Hardening No
Minimum DC Current Gain 200@10mA@2V|300@200mA@2V|110@1A@2V|[email protected]@2V|20@3A@2V
Seated Plane Height (mm) 0.6
Max Operating Temperature 150°C
Maximum Power Dissipation 2450mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 3.8A
Maximum Emitter Base Voltage 7V
Maximum Transition Frequency 160(Typ)MHz
Maximum Collector Base Voltage 100V
Maximum Collector-Emitter Voltage 80V

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