ZXTNS618MC

ZXTNS618MC - Diodes
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Краткое описание: NPN BJT Transistor 20V 5A SMT DFN 8-Pin

Дополнительная информация

NPN bipolar junction transistor (BJT) for surface mount applications, featuring a single dual collector configuration within an 8-pin DFN EP package. This component offers a maximum collector-emitter voltage of 20V and a maximum DC collector current of 5A, with a maximum power dissipation of 2450mW. Key specifications include a minimum DC current gain ranging from 200 to 100 across various current levels and a typical transition frequency of 140MHz. The compact DFN package measures 3mm x 2mm x 0.78mm with a 0.65mm pin pitch, operating across a temperature range of -55°C to 150°C.
PCB 8
ECCN EAR99
Type NPN
EU RoHS Yes
Category Bipolar Power
HTS Code 8541290075
Mounting Surface Mount
Cage Code 6M0U4
Pin Count 8
Lead Shape No Lead
Schedule B 8541290080
Package/Case DFN EP
Configuration Single Dual Collector
RoHS Versions 2011/65/EU
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 2
Package Description Dual Flat Package No Lead, Exposed Pad
Package Family Name DFN
Package Height (mm) 0.78
Package Length (mm) 3
Radiation Hardening No
Minimum DC Current Gain 200@10mA@2V|300@200mA@2V|200@2A@2V|100@6A@2V
Seated Plane Height (mm) 0.8
Max Operating Temperature 150°C
Maximum Power Dissipation 2450mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 5A
Maximum Emitter Base Voltage 7V
Maximum Transition Frequency 140(Typ)MHz
Maximum Collector Base Voltage 40V
Maximum Collector-Emitter Voltage 20V

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