ZXTP03200BZTA

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ZXTP03200BZTA - Diodes
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Краткое описание: PNP Transistor SOT-89 200V 2A 105MHz
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

The ZXTP03200BZTA is a PNP transistor with a maximum collector-emitter breakdown voltage of 200V and a continuous collector current of 2A. It has a gain bandwidth product of 105MHz and a maximum power dissipation of 1.1W. The transistor is packaged in a surface-mount SOT-89 package and is available in quantities of 1000 on tape and reel. It is compliant with RoHS and Reach SVHC regulations and has an operating temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Weight 0.004603oz
Polarity PNP
Packaging Tape and Reel
Package/Case SOT-89
RoHS Compliant Yes
Package Quantity 1000
Radiation Hardening No
Reach SVHC Compliant Yes
Transition Frequency 105MHz
Max Breakdown Voltage 200V
Max Collector Current 2A
Max Power Dissipation 1.1W
Gain Bandwidth Product 105MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 2A
Collector Base Voltage (VCBO) 220V
Collector-emitter Voltage-Max 260mV
Collector Emitter Breakdown Voltage 200V
Collector Emitter Saturation Voltage 260mV

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